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2SK1404
Silicon N Channel MOS FET
REJ03G0944-0300 Rev.3.00 May 15, 2006
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D G
1. Gate 2. Drain 3. Source
1
23
S
Rev.3.00 May 15, 2006 page 1 of 6
2SK1404
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 600 30 5 20 5 35 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 30 -- -- 2.0 -- 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max -- -- 10 250 3.0 1.5 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VGS = 10 V *3 ID = 2.5 A, VDS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 2.5 A, VGS = 10 V, RL = 12
IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/s
Rev.3.00 May 15, 2006 page 2 of 6
2SK1404
Main Characteristics
Power vs. Temperature Derating
60
Maximum Safe Operation Area
50 20
Channel Dissipation Pch (W)
Drain Current ID (A)
10 5
PW
10
40
10
1
s
0
s
2 1 0.5 0.2 0.1
D
m
C
= 10 m
s
O
pe
ra
s
tio
(1
n
o Sh
20
(T
Operation in this area is limited by RDS (on) Ta = 25C
c
t)
=
25
C
)
0 0 50 100 150
0.05 1 3 10 30 100 300 1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 10 V 6V Pulse Test 5V 4.5 V 10
Typical Transfer Characteristics
VDS = 20 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
8
8
6
6
4 4V 2 VGS = 3 V 0 0 10 20 30 40 3.5 V
4 Tc = 75C 2 25C -25C 0 0 2 4 6 8 10
50
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
50 Pulse Test 20 10 5 VGS = 10 V 2 1 0.5 0.2 15 V
Drain to Source Saturation Voltage VDS (on) (V)
10 Pulse Test 8 ID = 5 A
6
4 2A 2 1A
0 0 4 8 12 16 20
Static Drain to Source on State Resistance RDS (on) ()
0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 May 15, 2006 page 3 of 6
2SK1404
Static Drain to Source on State Resistance vs. Temperature
5 VGS = 10 V Pulse Test 4
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
10 5 VDS = 20 V Pulse Test
3 ID = 5 A 2 2A 1 1A
2 1 0.5
Tc = -25C
25C 75C
0.2 0.1 0.05
0 -40
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 VGS = 0 f = 1 MHz
Body to Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200 100 50 20 10 0.05 di / dt = 50 A / s VGS = 0, Ta = 25C Pulse Test 0.1 0.2 0.5 1 2 5
1000
Ciss
Coss 100
Crss 10 0 10 20 30 40 50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
1000 ID = 5 A 20 500
Switching Characteristics
VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 %
Switching Time t (ns)
800 VDD = 100 V 250 V 400 V VGS 400 VDS VDD = 400 V 250 V 100 V 0 8 16 24 32
16
200 td(off) 100 tf 50 tr td(on) 10 5 0.1
600
12
8
20
200
4 0 40
0
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 May 15, 2006 page 4 of 6
2SK1404
Reverse Drain Current vs. Source to Drain Voltage
10
Reverse Drain Current IDR (A)
Pulse Test 8
6
4
VGS = 5 V, 10 V
2 0, -5 V 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 1.0 0.5 0.3 0.2
0.1
TC = 25C
0.1
ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C PDM PW D = PW T
0.05
0.03
0.02 0.01 ulse P hot 1S
100 1m 10 m 100 m
T
0.01 10
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T. RL Vin 10 V 50 Vin Vout 10% 10%
Waveforms
90%
10% 90% td (off)
VDD . = 30 V .
90% td (on) tr
tf
Rev.3.00 May 15, 2006 page 5 of 6
2SK1404
Package Dimensions
Package Name TO-220FM JEITA Package Code SC-67 RENESAS Code PRSS0003AD-A Previous Code TO-220FM / TO-220FMV MASS[Typ.] 1.8g
Unit: mm
10.0 0.3 7.0 0.3 3.2 0.2
2.8 0.2 2.5 0.2
0.6
5.0 0.3
2.0 0.3
1.2 0.2 1.4 0.2
12.0 0.3
4.45 0.3 2.5
0.7 0.1 2.54 0.5 2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK1404-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 May 15, 2006 page 6 of 6
14.0 1.0
17.0 0.3
Sales Strategic Planning Div.
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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